Light-emitting device, method of manufacturing the same, and display unit

ABSTRACT

Light-emitting devices capable of preventing separation or alteration of a first electrode to obtain high performance, methods of manufacturing the light-emitting device, and display units are provided. A first electrode as an anode, an insulating film, an organic layer including a light-emitting layer, and a second electrode as a cathode are laminated in this order on a substrate with a planarizing layer as a base layer in between. The first electrode has a structure in which an adhesive layer, a reflective layer and a barrier layer is laminated in this order from the substrate. Alteration of the reflective layer can be prevented by the barrier layer, and the reflective layer can be prevented from being separated from the planarizing layer by the adhesive layer. The first electrode is formed through forming the adhesive layer, the reflective layer and the barrier layer on the planarizing layer, and then patterning them in order from the barrier layer.

CROSS REFERENCES TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.10/805,133 filed on Mar. 19, 2004, which claims priority to JapanesePatent Application Nos. P2003-085868, filed on Mar. 26, 2003;P2003-153053, filed on May 29, 2003; and P2003-299258 filed Aug. 22,2003, the disclosures of which are herein incorporated by reference.

BACKGROUND

The present invention relates to a light-emitting device reflectinglight generated in a light-emitting layer by a first electrode toextract the light from a second electrode side, a method ofmanufacturing the light-emitting device, and a display unit using thelight-emitting device.

In recent years, as one of flat panel displays, an organiclight-emitting display using an organic light-emitting device has becomea focus of attention. The organic light-emitting display is of aself-luminous type, so it is considered that the organic light-emittingdisplay has advantages of a wide viewing angle, low power consumptionand adequate response to high-definition high-speed video signals.Therefore, the development of the organic light-emitting displays towardpractical utilization has been proceeding.

As the organic light-emitting device, for example, a laminate includinga first electrode, an organic layer including a light-emitting layer,and a second electrode with a TFT (thin film transistor), a planarizinglayer and the like in between in order on a substrate is known. Lightgenerated in the light-emitting layer may be extracted from thesubstrate side or the second electrode side.

As an electrode where light is extracted, in many cases, a transparentelectrode made of an electrically conductive material with transparencysuch as a compound including indium (In), tin (Sn), oxygen (O), indiumtin oxide (ITO) and the like is used. Various structures of thetransparent electrode have previously been proposed. For example, inorder to prevent an increase in cost due to an increase in the thicknessof an ITO film, a transparent electrode including a laminate of a metalthin film made of silver (Ag) or the like and a high refractive indexfilm made of zinc oxide (ZnO) or the like has been proposed (forexample, refer to Japanese Unexamined Patent Application Publication No.2002-334792). In the transparent electrode, the high refractive indexfilm has a thickness of 5 nm to 350 nm, and the metal thin film has athickness of 1 nm to 50 nm, so the high refractive index film isrelatively thicker than the metal thin film, thereby the transparency ofthe transparent electrode is increased, and reflection by a surface ofthe metal thin film can be reduced by the high refractive index film.

In many cases, as an electrode where light is not extracted, variousmetal electrodes are used. For example, when light is extracted from thesecond electrode side, the first electrode as an anode is made of, forexample, a metal such as chromium (Cr). Conventionally, for example, afirst electrode with two-layer structure including a metallic materiallayer made of chromium and a buffer thin film layer made of an oxideincluding chromium has been proposed, thereby the surface roughness ofchromium of the metallic material layer is reduced by the buffer thinfilm layer (for example, refer to Japanese Unexamined Patent ApplicationPublication No. 2002-216976).

When light is extracted from the second electrode side, light generatedin the light-emitting layer may be directly extracted through the secondelectrode, or may be reflected by the first electrode once to be emittedthrough the second electrode. Conventionally, the first electrode ismade of chromium or the like, so there is a problem that the lightabsorptance of the first electrode is large, thereby a loss of lightreflected by the first electrode to be extracted is large. The lightabsorptance of the first electrode has a large influence on the organiclight-emitting device, so when the light-emitting efficiency is lower, alarger amount of current is required in order to obtain the sameintensity. An increase in the amount of drive current has a largeinfluence on the life of the organic light-emitting device which isextremely important for practical use of the organic light-emittingdevice.

Therefore, for example, it is considered that the first electrode ismade of silver (Ag) with the highest reflectance among metals or analloy including silver. However, silver has properties such that itsreactivity is extremely high, it is difficult to be processed, and itsadhesion is low. Therefore, in order to achieve a chemically stablefirst electrode with high reflectance through making full use ofadvantages of silver, the structure and the manufacturing process of thefirst electrode are susceptible to further improvement.

SUMMARY

In view of the foregoing, the present invention provides alight-emitting device capable of preventing separation or alteration ofa first electrode to obtain high performance, a method of manufacturingthe light-emitting device, and a display unit.

A light-emitting device according to an embodiment of the inventionincludes a first electrode, a layer including a light-emitting layer anda second electrode laminated in this order on a substrate with a baselayer in between, and extracts light generated in the light-emittinglayer from the second electrode, wherein the first electrode includes anadhesive layer disposed in contact with the base layer; a reflectivelayer disposed on the adhesive layer to reflect the light generated inthe light-emitting layer; and a barrier layer disposed on the reflectivelayer to protect the reflective layer.

In a method of manufacturing a light-emitting device according to anembodiment of the invention, the light-emitting device includes a firstelectrode, a layer including a light-emitting layer and a secondelectrode laminated in order on a substrate with a base layer inbetween, and the method includes the steps of forming an adhesive layeron the base layer; forming a reflective layer reflecting light generatedin the light-emitting layer on the adhesive layer; forming a barrierlayer protecting the reflective layer on the reflective layer; formingthe first electrode through patterning the barrier layer, the reflectivelayer and the adhesive layer in order from the barrier layer; formingthe layer including the light-emitting layer on the first electrode; andforming the second electrode on the layer including the light-emittinglayer.

A display unit according to an embodiment of the invention includes alight-emitting device comprising a first electrode, a layer including alight-emitting layer and a second electrode laminated in order on asubstrate with a base layer in between, and extracting light generatedin the light-emitting layer from the second electrode, wherein the firstelectrode includes: an adhesive layer disposed in contact with the baselayer; a reflective layer disposed on the adhesive layer to reflect thelight generated in the light-emitting layer; and a barrier layerdisposed on the reflective layer to protect the reflective layer.

In the light-emitting device according to an embodiment of the inventionand the display unit according to the invention, the first electrodeincludes the adhesive layer disposed in contact with the base layer, thereflective layer reflecting the light generated in the light-emittinglayer, and the barrier layer protecting the reflective layer, soalteration of the reflective layer can be prevented by the barrierlayer, and the reflective layer can be prevented from being separatedfrom the base layer by the adhesive layer, thereby the possibility thatthe alteration of the reflective layer from a separated portion thereofcan be eliminated. Therefore, it is suitable specifically in the casewhere the reflective layer is made of silver (Ag) or an alloy includingsilver.

In the method of manufacturing a light-emitting device according to anembodiment of the invention, after the adhesive layer, the reflectivelayer and the barrier layer are formed in order on the base layer, thebarrier layer, the reflective layer and the adhesive layer are patternedin order from the barrier layer to form the first electrode. Next, thelayer including the light-emitting layer is formed on the firstelectrode, and then the second electrode is formed on the layer.

In the light-emitting device according to an embodiment of the inventionor the display unit according to the invention, the first electrode hasa structure in which the adhesive layer, the reflective layer and thebarrier layer are laminated, so separation or alteration of thereflective layer can be prevented, thereby the occurrence of a shortcircuit between the first electrode and the second electrode due to thealteration of the reflective layer can be prevented. Therefore, it issuitable specifically in the case where the reflective layer is made ofsilver (Ag) or an alloy including silver, and defects in the displayunit can be reduced, and the life of the display unit can be extended.

In the method of manufacturing a light-emitting device according to anembodiment of the invention, after the adhesive layer, the reflectivelayer and the barrier layer are formed on the base layer, they arepatterned in order from the barrier layer to form the first electrode,so the material of the reflective layer can be prevented from reactingwith oxygen or sulfur in air, and damage on the reflective layer in amanufacturing step after forming the reflective layer can be reduced.Moreover, the reflective layer can be prevented from being separatedfrom the base layer by the adhesive layer, thereby an adverse effect onthe reflective layer by air or a chemical solution entered into aseparated portion of the reflective layer can be prevented.

Additional features and advantages are described herein, and will beapparent from, the following Detailed Description and the figures.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a sectional view of a display unit according to a firstembodiment of the invention.

FIG. 2 is an enlarged sectional view of an organic light-emitting deviceshown in FIG. 1.

FIG. 3 is an enlarged sectional view of the organic light-emittingdevice shown in FIG. 1.

FIGS. 4A and 4B are sectional views for showing steps in a method ofmanufacturing the display unit shown in FIG. 1.

FIGS. 5A, 5B and 5C are sectional views for showing steps following thesteps in FIGS. 4A and 4B.

FIGS. 6A and 6B are sectional views for showing steps following thesteps in FIGS. 5A through 5C.

FIGS. 7A and 7B are sectional views for showing steps following thesteps in FIGS. 6A and 6B.

FIG. 8 is a sectional view for showing a step following the steps inFIGS. 7A and 7B.

FIG. 9 is a sectional view for showing a step following the step in FIG.8.

FIG. 10 is a sectional view for showing a step following the step inFIG. 9.

FIG. 11 is a sectional view for showing a step following the step inFIG. 10.

FIGS. 12A and 12B are sectional views for showing steps following thestep in FIG. 11.

FIG. 13 is a sectional view for showing a step following the steps inFIGS. 12A and 12B.

FIG. 14 is a sectional view of a display unit according to a secondembodiment of the invention.

FIG. 15 is an enlarged sectional view of an organic light-emittingdevice shown in FIG. 14.

FIG. 16 is an enlarged sectional view of the organic light-emittingdevice shown in FIG. 14.

FIG. 17 is a graph showing reflectance of a first electrode of anorganic light-emitting device according to an example of the inventionpursuant to an embodiment.

FIG. 18 is a sectional view of a first electrode of an organiclight-emitting device according to a reference example of the inventionpursuant to an embodiment.

FIG. 19 is a graph of reflectance of the first electrode according tothe reference example shown in FIG. 18.

FIGS. 20A and 20B are sectional views for showing modification of thesteps shown in FIGS. 6A and 6B.

DETAILED DESCRIPTION

The present invention relates to a light-emitting device reflectinglight generated in a light-emitting layer by a first electrode toextract the light from a second electrode side, a method ofmanufacturing the light-emitting device, and a display unit using thelight-emitting device. Preferred embodiments of the present inventionwill be described in more detail below referring to the accompanyingdrawings.

FIG. 1 shows a sectional view of a display unit according to a firstembodiment of the invention. The display unit is used as an ultra-thinorganic light-emitting display, and in the display unit, for example, adrive panel 10 and a sealing panel 20 faces each other, and the wholefacing surfaces thereof are bonded together with an adhesive layer 30made of a thermosetting resin. The drive panel 10 includes an organiclight-emitting device 10R emitting red light, an organic light-emittingdevice 10G emitting green light and an organic light-emitting device 10Bemitting blue light disposed in order in a matrix shape as a whole on asubstrate 11 made of, for example, an insulating material such as glasswith a TFT 12 and a planarizing layer 13 in between.

A gate electrode (not shown) of the TFT 12 is connected to a scanningcircuit (not shown), and a source and a drain (both not shown) areconnected to a wiring 12B through an interlayer insulating film 12A madeof, for example, silicon oxide, PSG (phosphosilicate glass) or the like.The wiring 12B is connected to the source and the drain of the TFT 12through a connecting hole (not shown) disposed in the interlayerinsulating film 12A to function as a signal line. The wiring 12B is madeof, for example, aluminum (Al) or an aluminum (Al)-copper (Cu) alloy.The structure of the TFT 12 is not specifically limited, and may be of abottom gate structure or a top gate structure.

The planarizing layer 13 is a base layer for planarizing a surface ofthe substrate 11 where the TFT 12 is formed so as to form the organiclight-emitting devices 10R, 10G and 10B with uniform thicknesses. In theplanarizing layer 13, a connecting hole 13A is disposed to connect afirst electrode 14 of each of the organic light-emitting devices 10R,10G and 10B to the wiring 12B. In the planarizing layer 13, a minuteconnecting hole 13A is formed, so the planarizing layer 13 is preferablymade of a material with high pattern accuracy. As the material of theplanarizing layer 13, an organic material such as polyimide or aninorganic material such as silicon oxide (SiO₂) can be used. In theembodiment, the planarizing layer 13 is made of, for example, an organicmaterial such as polyimide and the like.

The organic light-emitting devices 10R, 10G and 10B each include, forexample, the first electrode 14 as an anode, an insulating film 15, anorganic layer 16 including a light-emitting layer and a second electrode17 as a cathode laminated in order from the substrate 11 with theplanarizing layer 13 as a base layer in between. A protective film 18 isformed on the second electrode 17 if necessary.

The first electrode 14 also has a function as a reflective layer, so thefirst electrode 14 preferably has as high reflectance as possible so asto enhance light-emitting efficiency. In the embodiment, the firstelectrode 14 has a structure in which an adhesive layer 14A, areflective layer 14B and a barrier layer 14C are laminated in order fromthe substrate 11. The adhesive layer 14A is disposed in contact with theplanarizing layer 13 to prevent the reflective layer 14B from beingseparated from the planarizing layer 13. The reflective layer 14Breflects light generated in the light-emitting layer. The barrier layer14C protects the reflective layer 14B.

The adhesive layer 14A is preferably made of, for example, a metal, anelectrically conductive oxide or a metal compound including at least onetype of metal elements such as chromium (Cr), indium (In), tin (Sn),zinc (Zn), cadmium (Cd), titanium (Ti), aluminum (Al), magnesium (Mg)and molybdenum (Mo), because these materials have high electricalconductivity, so a good electrical connection to the wiring 12B can beestablished. In an embodiment, the adhesive layer 14A is made of, forexample, chromium.

The adhesive layer 14A preferably has as large a thickness in a laminatedirection (hereinafter simply referred to “thickness”) as light does notpass therethrough. More specifically, when the adhesive layer 14A ismade of chromium, the adhesive layer 14A preferably has a thickness ofabout 40 nm to about 300 nm, and more preferably about 50 nm to about150 nm.

The reflective layer 14B is preferably made of, for example, silver oran alloy including silver, because silver has the highest reflectanceamong metals, so an absorption loss of light in the reflective layer 14Bcan be reduced. Moreover, the reflective layer 14B made of silver ispreferable, because the reflective layer 14B has the highestreflectance; however, the reflective layer 14B made of an alloyincluding silver and another metal is more preferable, because chemicalstability and processing accuracy can be enhanced, and adhesion with theadhesive layer 14A and the barrier layer 14C can be improved. Silver hasextremely high reactivity, low processing accuracy and low adhesion, soit is extremely difficult to handle silver.

Examples of the alloy including silver of the reflective layer 14Binclude alloys including silver (Ag) and at least one element, such asneodymium (Nd), samarium (Sm), yttrium (Y), cerium (Ce), europium (Eu),gadolinium (Gd), terbium (Tb), dysprosium (Dy), erbium (Er), ytterbium(Yb), scandium (Sc), ruthenium (Ru), copper (Cu), gold (Au) andcombinations thereof. More specifically, a AgSmCu alloy including silver(Ag), samarium (Sm) and copper (Cu) is cited, and an alloy includingsilver (Ag) as a main component, 0.03% by mass to 0.5% by mass inclusiveof samarium (Sm) and 0.2% by mass to 1.0% by mass inclusive of copper(Cu) is preferable. Moreover, an alloy including silver (Ag) as a maincomponent, 0.05% by mass to 0.2% by mass inclusive of samarium (Sm) and0.2% by mass to 1.0% by mass inclusive of copper (Cu) is morepreferable.

The thickness of the reflective layer 14B is preferably within a rangeof, for example, about 50 nm to about 300 nm inclusive. It is becausewhen the thickness is within the range, adhesion can be secured, therebythe separation of the first electrode 14 can be prevented. Further, thethickness of the reflective layer 14B is more preferably within a rangeof about 50 nm to about 150 nm inclusive. It is because when thethickness of the reflective layer 14B is reduced, the surface roughnessof the reflective layer 14B can be reduced, thereby the thickness of thebarrier layer 14C can be reduced to increase light extractionefficiency. Moreover, it is because when the thickness of the reflectivelayer 14B is reduced, an increase in the surface roughness due tocrystallization of the reflective layer 14B by heat processing duringmanufacturing can be reduced, thereby an increase in defects of thebarrier layer 14C due to the increased surface roughness of thereflective layer 14B can be prevented.

The barrier layer 14C has functions of preventing silver or an alloyincluding silver of the reflective layer 14B from reacting with oxygenor sulfur in air, and reducing damage on the reflective layer 14B duringa manufacturing step after forming the reflective layer 14B. Morespecifically, it is considered that the damage herein is caused by achemical solution or the like used to form an aperture portion 15A ofthe insulating film 15 which will be described later. Further, thebarrier layer 14C also has a function as a work function adjustmentlayer which enhances efficiency of hole injection into the organic layer16, so the barrier layer 14C is preferably made of a material having ahigher work function than the reflective layer 14B.

The barrier layer 14C is preferably a light transparent film made of,for example, a metal, an oxide or a metal compound including a metalelement such as indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium(Ti), chromium (Cr), gallium (Ga) aluminum (Al), the like andcombinations thereof. More specifically, the barrier layer 14C ispreferably made of at least one type of a compound including indium(In), tin (Sn), oxygen (O), indium tin oxide (ITO), a compound includingindium (In), zinc (Zn) and oxygen (O), such as indium zinc oxide (IZO),indium oxide (In₂O₃), tin oxide (SnO₂), zinc oxide (ZnO), cadmium oxide(CdO), titanium oxide (TiO₂), chromium oxide (CrO₂), gallium nitride(GaN), gallium oxide (Ga₂O₃), aluminum oxide (Al₂O₃), the like andcombinations thereof. It is because compared to the case where thebarrier layer 14C is made of a metallic material, by using any of theseinorganic light-transparent materials, the barrier layer 14C can beformed so as to have a smaller surface roughness, so the surfaceroughness of the reflective layer 14B made of silver or an alloyincluding silver can be reduced to improve the surface planarization ofthe first electrode 14. Moreover, it is because each layer of theorganic layer 16 formed on the first electrode 14 can have a uniformthickness, thereby a possibility of a short circuit between the firstelectrode 14 and the second electrode 17 due to the lack of thickness ofthe organic layer 16 can be eliminated, and specifically when aresonator structure which will be described later is formed, theoccurrence of color unevenness in pixels can be prevented to enhancecolor reproducibility. Further, it is because the materials haveextremely small light absorption in a visible light range, and goodlight transmittance, so an absorption loss when light generated in thelight-emitting layer passes through the barrier layer 14C can beminimized.

In order for the barrier layer 14C to secure the above-describedfunction as a protective film, the thickness of the barrier layer 14C ispreferably within a range of about 1 nm to about 50 nm inclusive, andmore preferably about 3 nm to about 30 nm inclusive.

The insulating film 15 is used to secure insulation between the firstelectrode 14 and the second electrode 17, and to accurately form adesired shape of a light-emitting region in each of the organiclight-emitting devices 10R, 10G and 10B. The insulating film 15 has, forexample, a thickness of approximately about 600 nm, and is made of aninsulating material, such as silicon dioxide (SiO₂), a polyimide and/orthe like. In the insulating film 15, an aperture portion 15A is disposedcorresponding to a light-emitting region.

The organic layer 16 has a different structure depending upon colorsemitted from the organic light-emitting devices 10R, 10G and 10B. FIG. 2shows an enlarged view of the organic layer 16 in the organiclight-emitting devices 10R and 10B. The organic layer 16 of each of theorganic light-emitting devices 10R and 10B has a structure in which ahole transport layer 16A, a light-emitting layer 16B and an electrontransport layer 16C are laminated in this order from the first electrode14. The hole transport layer 16A enhances the efficiency of holeinjection into the light-emitting layer 16B. In the embodiment, the holetransport layer 16A also serves as a hole injection layer. Thelight-emitting layer 16C generates light through applying an electricfield to recombine electrons and holes, and emits the light in a regioncorresponding to the aperture portion 15A of the insulating film 15. Theelectron transport layer 16C enhances the efficiency of electroninjection into the light-emitting layer 16B.

The hole transport layer 16A of the organic light-emitting device 10Rhas, for example, a thickness of approximately 45 nm, and made ofbis[(N-naphthyl)-N-phenyl]benzidine (α-NPD) and the like. Thelight-emitting layer 16B of the organic light-emitting device 10R has,for example, a thickness of approximately 50 nm, and is made of2,5-bis[4-[N-(4-methoxyphenyl)-N-phenylamino]]styrylbenzene-1,4-dicarbonitrile(BSB) and the like. The electron transport layer 16C of the organiclight-emitting device 10R has, for example, a thickness of approximately30 nm, and is made of 8-quinolinol aluminum complex (Alq₃) and the like.

The hole transport layer 16A of the organic light-emitting device 10Bhas, for example, a thickness of approximately 30 nm, and is made ofα-NPD. The light-emitting layer 16B of the organic light-emitting device10B has, for example, a thickness of approximately 30 nm, and is made of4,4′-bis(2,2′-diphenyl vinyl)biphenyl (DPVBi) and the like. The electrontransport layer 16C of the organic light-emitting device 10B has, forexample, a thickness of approximately 30 nm, and is made of Alq₃ and thelike.

FIG. 3 shows an enlarged view of the organic layer 16 in the organiclight-emitting device 10G. The organic layer 16 of the organiclight-emitting device 10G has a structure in which a hole transportlayer 16A and a light-emitting layer 16B are laminated in this orderfrom the first electrode 14. The hole transport layer 16A also serves asa hole injection layer, and the light-emitting layer 16B also serves asan electron transport layer.

The hole transport layer 16A of the organic light-emitting device 10Ghas, for example, a thickness of approximately 50 nm, and is made ofα-NPD and the like. The light-emitting layer 16B of the organiclight-emitting device 10G has, for example, a thickness of approximately60 nm, and is made of Alq₃ mixed with 1 vol % of Coumarin6 (C6).

The second electrode 17 shown in FIGS. 1, 2 and 3 has, for example, athickness of approximately 10 nm, and is made of a metal such as silver(Ag), aluminum (Al), magnesium (Mg), calcium (Ca) or sodium (Na), or analloy and the like. In the embodiment, for example, the second electrode17 is made of, for example, an alloy of magnesium (Mg) and silver (MgAgalloy) and the like.

The second electrode 17 is formed so that the organic light-emittingdevices 10R, 10G and 10B are covered with the second electrode 17,thereby the second electrode 17 is a common electrode of the organiclight-emitting devices 10R, 10G and 10B. An auxiliary electrode 17A ispreferably disposed on the insulating film 15 to reduce a voltage dropin the second electrode 17. The auxiliary electrode 17A is disposed ingaps between the organic light-emitting devices 10R, 10G and 10B, and anend portion thereof is connected to a trunk-shaped auxiliary electrode(not shown) which is a bus formed so as to surround a region where theorganic light-emitting devices 10R, 10G and 10B are disposed in aperipheral portion of the substrate 11. The auxiliary electrode 17A andthe trunk-shaped auxiliary electrode have a single layer structure or alaminate structure made of an electrically conductive material with lowresistance such as aluminum (Al) or chromium (Cr).

The second electrode 17 also serves as a semi-transparent reflectivelayer. More specifically, each of the organic light-emitting devices10R, 10G and 10B has a resonator structure in which assuming that an endsurface of the first electrode 14 on a side closer to the light-emittinglayer 16B and an end surface of the second electrode 17 on a side closerto the light-emitting layer 16B are a first end portion P1 and a secondend portion P2, respectively, and the organic layer 16 is a resonantportion, light generated in the light-emitting layer 16B is resonated tobe extracted from the second end portion P2. The organic light-emittingdevices 10R, 10G and 10B preferably have such a resonator structure,because when multiple interference of the light generated in thelight-emitting layer 16B occurs, the structure functions as a kind ofnarrow-band filter, so the half-value width of the spectrum of extractedlight can be reduced, and color purity can be improved. Moreover,external light incident from the sealing panel 20 can be attenuated bythe multiple interference, and the reflectance of the external light onthe organic light-emitting devices 10R, 10G and 10B can become extremelysmall by a combination of a color filter 22 (refer to FIG. 1) which willbe described later.

For the purpose, it is preferable that an optical distance L between thefirst end portion P1 and the second end portion P2 of the resonatorsatisfies Mathematical Formula 1 so that a resonant wavelength of theresonator (a peak wavelength of the spectrum of light to be extracted)matches a peak wavelength of the spectrum of light desired to beextracted. Actually, the optical distance L is preferably selected to bea positive minimum value satisfying Mathematical Formula 1.(2L)/λ+Φ/(2π)=m  Mathematical Formula 1

where L represents an optical distance between the first end portion P1and the second end portion P2, Φ represents the sum of a phase shift Φ₁of reflected light generated in the first end portion P1 and a phaseshift Φ₂ of reflected light generated in the second end portion P2(Φ=Φ₁+Φ₂) (rad), λ represents a peak wavelength of the spectrum of lightdesired to be extracted from the second end portion P2, and m is aninteger to make L a positive value. Further, in Mathematical Formula 1,the units of L and λ may be the same, for example, nanometers (nm).

Herein, as in the case of the embodiment, when the first electrode 14has a structure in which the adhesive layer 14A, the reflective layer14B and the barrier layer 14C are laminated, the position of the firstend portion P1 may vary depending upon the material and the thickness ofeach layer. In principle, as shown in FIGS. 2 and 3, reflected light hof the light generated in the light-emitting layer 16B on the first endportion P1 is a composite wave including reflected light h1 generated inan interface between the adhesive layer 14A and the reflective layer14B, reflective light h2 generated in an interface between thereflective layer 14B and the barrier layer 14C, and reflected light h3generated in an interface between the barrier layer 14C and the organiclayer 16, and the first end portion P1 is a virtual interfacecorresponding to the composite wave. However, in the embodiment, thereflective layer 14B is made of silver or an alloy including silver, sowhen the reflective layer 14B has an enough thickness, the reflectedlight h1 generated in the interface between the adhesive layer 14A andthe reflective layer 14B is small. Moreover, when the barrier layer 14Cis made of the above-described material, the reflected light h3generated in the interface between the barrier layer 14C and the organiclayer 16 is also small, so it can be considered that the barrier layer14C is included in a resonant portion, and the first end portion P1 isan interface between the reflective layer 14B and the barrier layer 14C.

The protective film 18 shown in FIG. 1 has, for example, a thickness ofabout 500 nm to about 10000 nm inclusive, and is a passivation film madeof a transparent dielectric. The protective film 18 is made of, forexample, silicon oxide (SiO₂), silicon nitride (SiN) or the like.

As shown in FIG. 1, the sealing panel 20 is placed on a side of thedrive panel 10 closer to the second electrode 17, and has a sealingsubstrate 21 which seals the organic light-emitting devices 10R, 10G and10B with the adhesive layer 30. The sealing substrate 21 is made of amaterial transparent to light generated in the organic light-emittingdevices 10R, 10G and 10B such as glass or the like. For example, thecolor filter 22 is disposed on the sealing substrate 21 to extract lightgenerated in the organic light-emitting devices 10R, 10G and 10B, and toabsorb external light reflected by the organic light-emitting devices10R, 10G and 10B and wirings therebetween, thereby the contrast isimproved.

The color filter 22 may be disposed on either side of the sealingsubstrate 21, but the color filter 22 is preferably disposed on a sidecloser to the drive panel 10, because the color filter 22 is not exposedto the surface, and can be protected by the adhesive layer 30. The colorfilter 22 includes a red filter 22R, a green filter 22G and a bluefilter 22B, which are disposed corresponding to the organiclight-emitting devices 10R, 10G and 10B, respectively.

The red filter 22R, the green filter 22G and the blue filter 22B eachhave, for example, a rectangular shape, and are formed with no space inbetween. The red filter 22R, the green filter 22G and the blue filter22B each are made of a resin mixed with pigments, and by the selectionof the pigments, the light transmittance in a targeted wavelength ofred, green or blue is adjusted to be higher, and the light transmittancein other wavelengths is adjusted to be lower.

Moreover, a wavelength range with high transmittance in the color filter22 matches the peak wavelength λ of the spectrum of light desired to beextracted from the resonator structure. Thereby, among external lightincident from the sealing panel 20, only light having a wavelengthequivalent to the peak wavelength λ of the spectrum of light to beextracted passes through the color filter 22, and external light withother wavelengths can be prevented from entering into the organiclight-emitting devices 10R, 10G and 10B.

The display unit can be manufactured through, for example, the followingsteps.

FIGS. 4A through 13 show steps in a method of manufacturing the displayunit in order. At first, as shown in FIG. 4A, the TFT 12, the interlayerinsulating film 12A and the wiring 12B are formed on the substrate 11made of the above-described material.

Next, as shown in FIG. 4B, the planarizing layer 13 made of theabove-described material is formed throughout the substrate by, forexample, a spin coat method, and then while the planarizing layer 13 ispatterned in a predetermined shape by exposure and development, theconnecting hole 13A is formed. After that, in order to imidizepolyimide, polyimide is baked at, for example, 320° C. with a cleanbaking furnace.

Next, as shown in FIG. 5A, the adhesive layer 14A made of, for example,chromium (Cr) with a thickness of about 80 nm is formed on theplanarizing layer 13 by, for example, sputtering.

After that, as shown in FIG. 5B, the reflective layer 14B made of, forexample, an alloy including silver with a thickness of about 150 nm isformed on the adhesive layer 14A by, for example, sputtering. Thus, thereflective layer 14B is formed on the planarizing layer 13 with theadhesive layer 14A in between, thereby the reflective layer 14B can beprevented from being separated from the planarizing layer 13 as a baselayer. Moreover, the entry of an etching solution or air from aseparated portion of the reflective layer 14 can be prevented, therebysilver or an alloy including silver of the reflective layer 14B can beprevented from reacting with oxygen or sulfur included in the etchingsolution or the air.

Next, as shown in FIG. 5C, the barrier layer 14C made of, for example,ITO with a thickness of 15 nm is formed on the reflective layer 14B by,for example, sputtering. Thus, after forming the reflective layer 14B,the barrier layer 14C is immediately formed, thereby silver or the alloyincluding silver of the reflective layer 14B can be prevented fromreacting with oxygen or sulfur in air, and during a manufacturing stepafter forming the reflective layer 14B, damage on the reflective layer14B can be reduced, and an interface between the reflective layer 14Band the barrier layer 14C can be maintained clean.

After forming the adhesive layer 14A, the reflective layer 14B and thebarrier layer 14C, as shown in FIG. 6A, the barrier layer 14C and thereflective layer 14B are selectively etched by, for example, lithographyor wet etching to be patterned in a predetermined shape.

Next, as shown in FIG. 6B, the adhesive layer 14A is patterned by, forexample, lithography or wet etching to form the first electrode 14. Atthis time, a sidewall of the reflective layer 14B is preferably coveredwith a photoresist, because the possibility that the sidewall of thereflective layer 14B contacts a chemical solution for wet etching can beeliminated, thereby damage on the reflective layer 14B can be reduced.

After that, as shown in FIG. 7A, the insulating film 15 with theabove-described thickness is formed throughout the substrate 11 by, forexample, CVD (chemical vapor deposition), and a portion of theinsulating film 15 corresponding to the light-emitting region isselectively removed by, for example, lithography to form the apertureportion 15A.

Next, as shown in FIG. 7B, the auxiliary electrode 17A is formed on theinsulating film 15 throughout the substrate 11, and then is selectivelyetched by, for example, lithography to be patterned in a predeterminedshape.

Next, as shown in FIG. 8, the hole transport layer 16A, thelight-emitting layer 16B and the electron transport layer 16C of theorganic light-emitting device 10R all of which are made of theabove-described materials with the above-described thicknesses areformed by, for example, vapor deposition to form the organic layer 16 ofthe organic light-emitting device 10R. At this time, it is preferablethat a metallic mask 41 having an aperture 41A corresponding to a regionwhere the organic layer 16 is formed is used to form the organic layer16 corresponding to the light-emitting region, that is, the apertureportion 15A of the insulating film 15. However, it is difficult todeposit the organic layer 16 only in the aperture portion 15A with highaccuracy, so the whole aperture portion 15A may be covered with theorganic layer 16 so as to lay the organic layer 16 on an edge of theinsulating film 15.

After that, the mask 41 is shifted, and as shown in FIG. 9, as in thecase of the organic layer 16 of the organic light-emitting device 10R,the hole transport layer 16A and the light-emitting layer 16B of theorganic light-emitting device 10G both made of the above-describedmaterials with the above-described thicknesses are formed so as to formthe organic layer 16 of the organic light-emitting device 10G. Next, themask 41 is shifted again, and as shown in FIG. 9, as in the case of theorganic layer 16 of the organic light-emitting device 10R, the holetransport layer 16A, the light-emitting layer 16B and the electrontransport layer 16C of the organic light-emitting device 10B all ofwhich are made of the above-described materials with the above-describedthicknesses are formed so as to form the organic layer 16 of the organiclight-emitting device 10B. FIG. 9 shows a state in which the aperture41A of the mask 41 faces the organic layer 16 of the organiclight-emitting device 10B.

After forming the organic layer 16 of each of the organic light-emittingdevices 10R, 10G and 10B, as shown in FIG. 10, the second electrode 17made of the above-described material with the above-described thicknessis formed throughout the substrate 11 by, for example, vapor deposition.Thereby, the second electrode 17 is electrically connected to theauxiliary electrode 17A which has already been formed and thetrunk-shaped auxiliary electrode (not shown) as a bus. Thus, the organiclight-emitting devices 10R, 10G and 10B shown in FIGS. 1 through 3 areformed.

Next, as shown in FIG. 11, the protective film 18 made of theabove-described material with the above-described thickness is formed onthe second electrode 17. Thereby, the drive panel 10 shown in FIG. 1 isformed.

Moreover, as shown in FIG. 12A, the sealing substrate 21 made of theabove-described material is coated with the material of the red filter22R by spin coating or the like, and then the material of the red filter22R is patterned by photolithography, and is baked so as to form the redfilter 22R. Next, as shown in FIG. 12B, as in the case of the red filter22R, the blue filter 22B and the green filter 22G are formed in order.Thereby, the sealing panel 20 is formed.

After forming the sealing panel 20 and the drive panel 10, as shown inFIG. 13, the adhesive layer 30 made of a thermosetting resin is formedthrough coating on a side of the substrate 11 where the organiclight-emitting devices 10R, 10G and 100B are formed. The coating may becarried out through emitting the resin from a slit nozzle dispenser, orthrough roll coating or screen printing. Next, as shown in FIG. 1, thedrive panel 10 and the sealing panel 20 are bonded together with theadhesive layer 30 in between. At this time, a surface of the sealingpanel 20 where the color filter 22 is formed preferably faces the drivepanel 10. Moreover, it is preferable to avoid air bubbles from enteringinto the adhesive layer 30. After that, relative positioning between thecolor filter 22 of the sealing panel 20 and the organic light-emittingdevices 10R, 10G and 10B of the drive panel 10 is aligned, then heattreatment is carried out at a predetermined temperature for apredetermined time to cure the thermosetting resin of the adhesive layer30. Thereby, the display unit shown in FIGS. 1 through 3 is completed.

In the display unit, when a predetermined voltage is applied between thefirst electrode 14 and the second electrode 17, a current is injectedinto the light-emitting layer 16B of the organic layer 16, and holes andelectrons are recombined to emit light mainly from an interface of thelight-emitting layer 16B on a side closer to the hole transport layer16A. The light is reflected several times between the first end portionP1 and the second end portion P2, and then passes through the secondelectrode 17 to be extracted. In the embodiment, the first electrode 14has a structure in which the adhesive layer 14A, the reflective layer14B and the barrier layer 14C are laminated, so alteration of thereflective layer 14B can be prevented by the barrier layer 14C, and thereflective layer 14B can be prevented from being separated from theplanarizing layer 13 by the adhesive layer 14A.

Thus, in the embodiment, the first electrode 14 has a structure in whichthe adhesive layer 14A, the reflective layer 14B and the barrier layer14C are laminated, so separation or alteration of the reflective layer14B can be prevented, thereby the occurrence of a short circuit betweenthe first electrode 14 and the second electrode 17 due to the alterationof the reflective layer 14B can be prevented. Therefore, the embodimentis specifically suitable when the reflective layer 14B is made of silver(Ag) or an alloy including silver, and in the embodiment, defects in thedisplay unit can be reduced, and the life of the display unit can beextended.

Moreover, in the embodiment, after the adhesive layer 14A, thereflective layer 14B and the barrier layer 14C are formed on theplanarizing layer 13 as a base layer, they are patterned in order fromthe barrier layer 14C to form the first electrode 14, so silver or thealloy including silver of the reflective layer 14B can be prevented fromreacting with oxygen or sulfur in air by the barrier layer 14C, anddamage on the reflective layer 14B during a manufacturing step afterforming the reflective layer 14B can be reduced. Further, the reflectivelayer 14B can be prevented from being separated from the planarizinglayer 13 by the adhesive layer 14A, thereby an adverse effect on thereflective layer 14B by air or a chemical solution entered into aseparated portion of the reflective layer 14B can be prevented.

FIG. 14 shows a sectional view of a display unit according to a secondembodiment of the invention. The display unit is equivalent to thedisplay unit according to the first embodiment, except that instead ofthe adhesive layer 14A of the first electrode 14, the display unitcomprises an adhesive layer-cum-auxiliary reflective film 14D which alsohas a function as a auxiliary reflective film reflecting light generatedin the light-emitting layer 16B and passing through the reflective layer14B. Therefore, like components are denoted by like numerals as of thefirst embodiment and will not be further explained.

The adhesive layer-cum-auxiliary reflective film 14D is preferably madeof, for example, a metal, an electrically conductive oxide or a metalcompound including at least one kind of metal elements, such as chromium(Cr), indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti),aluminum (Al), magnesium (Mg) molybdenum (Mo) and the like, becausethese materials have high electrical conductivity, so a good electricalconnection to the wiring 12B can be established. Moreover, in terms ofreflectance, they have small absorption in a visible light range, sohigh effects as an auxiliary reflective film can be obtained. Further,the adhesive layer-cum-auxiliary reflective film 14D preferably has areflectance of 50% or over, because higher effects can be obtained. Inthe embodiment, the adhesive layer-cum-auxiliary reflective film 14D ismade of, for example, chromium (with a reflectance of approximately 70%in a wavelength range of about 400 nm to about 500 nm, and approximately66% in a wavelength range of about 600 nm to about 800 nm as a largerwavelength causes a reduction in the reflectance).

As in the case of the adhesive layer 14A in the first embodiment, theadhesive layer-cum-auxiliary reflective film 14D preferably has as largea thickness as light does not pass therethrough. More specifically, whenthe adhesive layer-cum-auxiliary reflective film 14D is made ofchromium, the thickness thereof is preferably within a range of about 40nm to about 300 nm inclusive, and more preferably within a range ofabout 50 nm to about 150 nm inclusive.

As in the case of the first embodiment, the reflective layer 14B ispreferably made of, for example, silver or an alloy including silver.The reflective layer 14B preferably has, for example, a thickness ofabout 10 nm to about 150 nm inclusive. It is because when the thicknessis within the range, a reflectance equivalent to that in the firstembodiment can be obtained by a synergistic effect with the adhesivelayer-cum-auxiliary reflective film 14D. Moreover, the thickness of thereflective layer 14B is more preferably within a range of about 10 nm toabout 100 nm inclusive. It is because when the thickness of thereflective layer 14B is reduced, its surface roughness can be reduced,thereby the thickness of the barrier layer 14C can be reduced to furtherincrease light extraction efficiency. Moreover, it is because when thethickness of the reflective layer 14B is reduced, an increase in thesurface roughness due to crystallization of the reflective layer 14B byheat processing during manufacturing can be reduced, thereby an increasein defects of the barrier layer 14C due to the increased surfaceroughness of the reflective layer 14B can be prevented more effectively.

As in the case of the first embodiment, the barrier layer 14C ispreferably made of an inorganic transparent material, and morespecifically, the barrier layer 14C is preferably made of at least onekind selected from the group consisting of a compound including indium(In), tin (Sn) and oxygen (O), indium tin oxide (ITO), a compoundincluding indium (In), zinc (Zn) and oxygen (O), indium zinc oxide(IZO), tin oxide (SnO₂), zinc oxide (ZnO), cadmium oxide (CdO), titaniumoxide (TiO₂) chromium oxide (CrO₂) and the like.

The barrier layer 14C preferably has, for example, a thickness of about1 nm to about 50 nm inclusive, and more preferably about 3 nm to about15 nm inclusive. It is because in the embodiment, as described above,the thickness of the reflective layer 14B can be reduced, so even if thethickness of the barrier layer 14C is reduced to the above range, afunction as a protective film can be secured. Moreover, it is becausewhen the thickness of the barrier layer 14C is reduced, a loss in lightabsorption can be reduced to further enhance light extractionefficiency.

When the first electrode 14 has a structure in which the adhesivelayer-cum-auxiliary reflective film 14D, the reflective layer 14B andthe barrier layer 14C are laminated according to the embodiment, asdescribed above, the thickness of the reflective layer 14B can bethinner than that in the first embodiment. In this case, reflected lighth2 generated in an interface between the reflective layer 14B and thebarrier layer 14C is smaller than that in the first embodiment, andreflected light h1 generated in an interface between the adhesivelayer-cum-auxiliary reflective film 14D and the reflective layer 14B islarger than that in the first embodiment. Therefore, as shown in FIGS.15 and 16, it can be considered that the first end portion P1 includesan interface between the reflective layer 14B and the barrier layer 14Cand an interface between the adhesive layer-cum-auxiliary reflectivefilm 14D and the reflective layer 14B. Reflected light h3 generated inan interface between the barrier layer 14C and the organic layer 16 isas small as that in the first embodiment, so the barrier layer 14C isincluded in the resonant portion.

The display unit can be manufactured as in the case of the firstembodiment.

In the display unit, when a predetermined voltage is applied between thefirst electrode 14 and the second electrode 17, a current is injectedinto the light-emitting layer 16B of the organic layer 16, and holes andelectrons are recombined to emit light mainly from an interface of thelight-emitting layer 16B on a side closer to the hole transport layer16A. The light is reflected several times between the first end portionP1 and the second end portion P2, and then passes through the secondelectrode 17 to be extracted. In the embodiment, the first electrode 14has a structure in which the adhesive layer-cum-auxiliary reflectivefilm 14D, the reflective layer 14B and the barrier layer 14C arelaminated, so light generated in the light-emitting layer 16B and havingpassed through the barrier layer 14C and the reflective layer 14B isreflected by the adhesive layer-cum-auxiliary reflective film 14D.Therefore, even if the reflective layer 14B has a thinner thickness,high reflectance can be maintained.

Thus, in the embodiment, the first electrode 14 has a structure in whichthe adhesive layer-cum-auxiliary reflective film 14D, the reflectivelayer 14B and the barrier layer 14C are laminated, so even if thereflective layer 14B has a thinner thickness, a decline in thereflectance of the reflective layer 14B can be prevented by the adhesivelayer-cum-auxiliary reflective film 14D to obtain high reflectance.Moreover, when the thickness of the reflective layer 14B is reduced, thethickness of the barrier layer 14C can be also reduced, thereby lightextraction efficiency can be improved.

Examples of the present invention are described below withoutlimitation.

EXAMPLE 1

As in the case of the second embodiment, the organic light-emittingdevice was formed. At that time, the first electrode 14 had a structurein which the adhesive layer-cum-auxiliary reflective film 14D made ofchromium with a thickness of about 40 nm, the reflective layer 14B madeof an alloy including silver with a thickness of about 36 nm, and thebarrier layer 14C made of ITO with a thickness of 7.5 nm were laminated.Moreover, the resonant wavelength of the above-described resonator (peakwavelength of the spectrum of light extracted from the second electrode17) was set to about 400 nm and about 800 nm. In the obtained organiclight-emitting device, the reflectance of the first electrode 14 in bothcases was determined. The obtained results are shown in FIG. 17.

As Reference Examples 1 through 5 relative to the example, as shown inFIG. 18, a first electrode 114 which was equivalent to the exampleexcept that the first electrode 114 included only a reflective layer114B and a barrier layer 114C, and the adhesive layer-cum-auxiliaryreflective film was not included. At that time, the thickness of thereflective layer 114B was 36 nm in Reference Example 1, 70 nm inReference Example 2, 90 nm in Reference Example 3, 110 nm in ReferenceExample 4 and 150 nm in Reference Example 5. In Reference Examples 1through 5, the reflectance of the first electrode 114 was determined.The obtained results are shown in FIG. 19, and the results of ReferenceExamples 1 and 5 are also shown in FIG. 17.

It was evident from FIG. 19 that in Reference Examples 1 through 5 inwhich the adhesive layer-cum-auxiliary reflective film is not included,the reflectance was declined according to a decrease in the thickness ofthe reflective layer 114B in both cases of the resonant wavelengths ofabout 800 nm and about 400 nm. Among them, in Reference Examples 1through 3 in which the thickness of the reflective layer 114B was about100 nm or less, a decline in the reflectance specifically in theresonant wavelength of about 400 nm was pronounced. On the other hand,it was obvious from FIG. 17 that in the example in which the adhesivelayer-cum-auxiliary reflective film 14D was included, compared toReference Example 1 having the reflective layer 114B with the samethickness as that in the example, the reflectance was improved in bothcases of the resonant wavelengths of about 800 nm and about 400 nm.Specifically in the resonant wavelength of about 400 nm, the samereflectance as that in Reference Example 5 in which the thickness of thereflective layer 114B was about 150 nm could be obtained. In otherwords, it was found out that when the first electrode 14 included theadhesive layer-cum-auxiliary reflective film 14D, a decline in thereflectance due to a reduction in the thickness of the reflective layer14B can be offset, and characteristics can be improved.

EXAMPLE 2

The first electrode 14 was formed as in the case of Example 1, exceptthat the thickness of the adhesive layer 14A was about 150 nm. Thereflectance thereof was determined, and the same results as those inExample 1 were obtained. The obtained results are shown in FIG. 17.

Although the present invention is described referring to the embodimentsand the examples, the invention is not limited to the embodiments andthe examples, and is variously modified. For example, the materials andthe thicknesses of the layers, film forming methods, film formingconditions and so on are not limited to those described in theembodiments and the examples, and any other materials, any otherthicknesses, any other film forming methods and any other film formingconditions may be applicable. For example, the adhesive layer 14A or theadhesive layer-cum-auxiliary reflective film 14D can be formed by notonly sputtering, but also vapor deposition, CVD, MOCVD (metal organicchemical vapor deposition), laser ablation, plating and the like. Thereflective layer 14B can be also formed by not only sputtering but alsovapor deposition, CVD, MOCVD, laser ablation, plating and the like.

Moreover, for example, in the above embodiments and the above examples,the case where the adhesive layer 14A or the adhesivelayer-cum-auxiliary reflective film 14D, the reflective layer 14B andthe barrier layer 14C are patterned by wet etching is described, theymay be patterned by dry etching.

Further, for example, in the embodiments and the examples, the casewhere after the barrier layer 14C and the reflective layer 14B arepatterned, the adhesive layer 14A or the adhesive layer-cum-auxiliaryreflective film 14D is patterned is described; however, as shown in FIG.20A, at first, only the barrier layer 14C is patterned, and then asshown in FIG. 20B, the reflective layer 14B, and the adhesive layer 14Aor the adhesive layer-cum-auxiliary reflective film 14D may bepatterned. Further, the barrier layer 14C, the reflective layer 14B, andthe adhesive layer 14A or the adhesive layer-cum-auxiliary reflectivefilm 14D may be patterned one after another from the barrier layer 14C.

In addition, for example, in the second embodiment, the case where theadhesive layer-cum-auxiliary reflective film 14D having functions as anadhesive layer and an auxiliary reflective film is included isdescribed; however, a laminate structure in which an auxiliaryreflective film and an adhesive layer are laminated in this order fromthe planarizing layer 13 as a base layer may be included.

Further, in the embodiments, the structures of the organiclight-emitting devices 10R, 10G and 10B are described in detail;however, each of them does not necessarily include all layers such asthe insulating film 15, the auxiliary electrode 17A and the protectivefilm 18, and each of them may further include any other layer. Althoughthe invention is applicable to the case where the second electrode 17 isnot a semi-transparent electrode but a transparent electrode, and thesecond electrode 17 does not have a resonator structure, the inventionis to enhance the reflectance in the first electrode 14, so in the casewhere an interface of the first electrode 14 on a side closer to thelight-emitting layer 16B and an interface of the second electrode 17 ona side closer to the light-emitting layer 16B are the first end portionP1 and the second end portion P2 respectively, and the organic layer 16has a resonator structure as a resonant portion, higher effects can beobtained.

In addition, in the embodiments, the case where the invention is appliedto the organic light-emitting device or the display unit comprising theorganic light-emitting device is described; however, the invention isapplicable to any other display unit such as, for example, a liquidcrystal display panel.

It should be understood that various changes and modifications to thepresently preferred embodiments described herein will be apparent tothose skilled in the art. Such changes and modifications can be madewithout departing from the spirit and scope of the present invention andwithout diminishing its intended advantages. It is therefore intendedthat such changes and modifications be covered by the appended claims.

It should be understood that various changes and modifications to thepresently preferred embodiments described herein will be apparent tothose skilled in the art. Such changes and modifications can be madewithout departing from the spirit and scope of the present subjectmatter and without diminishing its intended advantages. It is thereforeintended that such changes and modifications be covered by the appendedclaims.

1. A light-emitting device comprising: a first electrode, a layerincluding a light-emitting layer and a second electrode laminated insequence on a substrate with a base layer in between, and extractinglight generated in the light-emitting layer from the second electrode,wherein the first electrode includes an adhesive layer disposed incontact with the base layer; a reflective layer disposed on the adhesivelayer to reflect the light generated in the light-emitting layer; and abarrier layer disposed on the reflective layer to protect the reflectivelayer.
 2. The light-emitting device according to claim 1, wherein theadhesive layer is made of at least one of a metal, an electricallyconductive oxide and a metal compound that include a metal elementselected from the group consisting of chromium (Cr), indium (In), tin(Sn), zinc (Zn), cadmium (Cd), titanium (Ti), aluminum (Al), magnesium(Mg) molybdenum (Mo) and combinations thereof.
 3. The light-emittingdevice according to claim 1, wherein the reflective layer includes atleast one of silver (Ag) and an alloy including silver.
 4. Thelight-emitting device according to claim 1, wherein the reflective layeris made of an alloy including silver (Ag) and a constituent selectedfrom the group consisting of neodymium (Nd), samarium (Sm), yttrium (Y),cerium (Ce), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium(Dy), erbium (Er), ytterbium (Yb), scandium (Sc), ruthenium (Ru), copper(Cu), gold (Au) and combinations thereof.
 5. The light-emitting deviceaccording to claim 1, wherein the reflective layer includes an alloyincluding silver (Ag), samarium (Sm) and copper (Cu).
 7. Thelight-emitting device according to claim 1, wherein the barrier layerincludes a light-transparent film including at least one of a metal, anoxide and a metal compound including at least one kind selected from thegroup of metal elements consisting of indium (In), tin (Sn), zinc (Zn),cadmium (Cd), titanium (Ti), chromium (Cr), gallium (Ga) and aluminum(Al).
 8. The light-emitting device according to claim 1, wherein thebarrier layer includes at least one kind selected from the groupconsisting of a compound including indium (In), tin (Sn) and oxygen (O),a compound including indium (In), zinc (Zn) and oxygen (O), indium tinoxide (ITO), indium zinc oxide (IZO), indium oxide (In₂O₃), tin oxide(SnO₂), zinc oxide (ZnO), cadmium oxide (CdO), titanium oxide (TiO₂),chromium oxide (CrO₂), gallium nitride (GaN), gallium oxide (Ga₂O₃)aluminum oxide (Al₂O₃) and combinations thereof.
 9. The light-emittingdevice according to claim 1, wherein the thickness of the barrier layerranges from about 1 nm to about 50 nm inclusive.
 10. The light-emittingdevice according to claim 1, wherein the base layer includes aplanarizing layer.
 11. The light-emitting device according to claim 1,wherein a layer including the light-emitting layer includes an organiclayer.
 12. The light-emitting device according to claim 1, wherein theadhesive layer also serves as an auxiliary reflective film reflectinglight generated in the light-emitting layer and having passed throughthe reflective layer.
 13. The light-emitting device according to claim12, wherein the auxiliary reflective film includes at least one of ametal, an electrically conductive oxide, and a metal compound includingat least one kind selected from the group of metal elements consistingof chromium (Cr), indium (In), tin (Sn), zinc (Zn), cadmium (Cd),titanium (Ti), aluminum (Al), magnesium (Mg) and molybdenum (Mo). 14.The light-emitting device according to claim 12, wherein the auxiliaryreflective film has a reflectance of about 50% or greater.
 15. A methodof manufacturing a light-emitting device, the light-emitting devicecomprising a first electrode, a layer including a light-emitting layerand a second electrode laminated in order on a substrate with a baselayer in between, the method comprising the steps of: forming anadhesive layer on the base layer, forming a reflective layer reflectinglight generated in the light-emitting layer on the adhesive layer;forming a barrier layer protecting the reflective layer on thereflective layer; forming the first electrode through patterning thebarrier layer, the reflective layer and the adhesive layer in order fromthe barrier layer; forming the layer including the light-emitting layeron the first electrode; and forming the second electrode on the layerincluding the light-emitting layer.
 16. The method of manufacturing alight-emitting device according to claim 15, wherein the adhesive layerincludes at least one of a metal, an electrically conductive oxide and ametal compound including a metal element selected from the groupconsisting of chromium (Cr), indium (In), tin (Sn), zinc (Zn), cadmium(Cd), titanium (Ti), aluminum (Al), magnesium (Mg), molybdenum (Mo) andcombinations thereof.
 17. The method of manufacturing a light-emittingdevice according to claim 15, wherein the reflective layer includessilver (Ag) or an alloy including silver.
 18. The method ofmanufacturing a light-emitting device according to claim 15, wherein thereflective layer is made of an alloy including silver (Ag) and at leastone-kind selected from the group consisting of neodymium (Nd), samarium(Sm), yttrium (Y), cerium (Ce), europium (Eu), gadolinium (Gd), terbium(Tb), dysprosium (Dy), erbium (Er), ytterbium (Yb), scandium (Sc),ruthenium (Ru), copper (Cu) and gold (Au).
 19. The method ofmanufacturing a light-emitting device according to claim 15, wherein thereflective layer includes an alloy including silver (Ag), samarium (Sm)and copper (Cu).
 20. The method of manufacturing a light-emitting deviceaccording to claim 15, wherein the barrier layer includes alight-transparent film made of at least one of a metal, an oxide and ametal compound including at least one kind selected from the group ofmetal elements consisting of indium (In), tin (Sn), zinc (Zn), cadmium(Cd), titanium (Ti), chromium (Cr), gallium (Ga) and aluminum (Al). 21.The method of manufacturing a light-emitting device according to claim15, wherein the barrier layer includes a material selected from thegroup consisting of a compound including indium (In), tin (Sn) andoxygen (O), a compound including indium (In), zinc (Zn) and oxygen (O),indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (In₂O₃),tin oxide (SnO₂), zinc oxide (ZnO), cadmium oxide (CdO), titanium oxide(TiO₂), chromium oxide (CrO₂), gallium nitride (GaN), gallium oxide(Ga₂O₃) and aluminum oxide (Al₂O₃).
 22. The method of manufacturing alight-emitting device according to claim 15, wherein the thickness ofthe barrier layer ranges from about 1 nm to about 50 nm.
 23. The methodof manufacturing a light-emitting device according to claim 15, whereinas the layer including the light-emitting layer, an organic layer isformed.
 24. A display unit, comprising: a light-emitting devicecomprising a first electrode, a layer including a light-emitting layerand a second electrode laminated in order on a substrate with a baselayer in between, and extracting light generated in the light-emittinglayer from the second electrode, wherein the first electrode includes anadhesive layer disposed in contact with the base layer; a reflectivelayer disposed on the adhesive layer to reflect the light generated inthe light-emitting layer; and a barrier layer disposed on the reflectivelayer to protect the reflective layer.
 25. The display unit according toclaim 24, wherein the layer including the light-emitting layer includesan organic layer.